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2SBA6 15KPA28C T373A TDA8512J ZHCS1000 08S19 224EEY EVAL2
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  transistors with built-in resistor 1 publication date: december 2003 sjh00012ced parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 01 a collector-emitter cutoff current (base open) i ceo v ce = 50 v, i b = 01 a emitter-base unr2221 i ebo v eb = 6 v, i c = 05ma cutoff current unr2222 2 (collector open) unr2223/2224 1 forward current unr2221 h fe v ce = 10 v, i c = 100 ma 40 ? transfer ratio unr2222 50 unr2223/2224 60 collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 5 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 500 ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 3.5 v, r l = 500 ? 0.2 v unr222x series (UN222X series) silicon npn epitaxial planar type for digital circuits features ? costs can be reduced through downsizing of the equipment and reduction of the number of parts. ? mini type package allowing easy automatic insertion through tape packing and magazine packing resistance by part number marking symbol (r 1 )(r 2 ) ? unr2221 (un2221) 9a 2.2 k ? 2.2 k ? ? unr2222 (un2222) 9b 4.7 k ? 4.7 k ? ? unr2223 (un2223) 9c 10 k ? 10 k ? ? unr2224 (un2224) 9d 2.2 k ? 10 k ? absolute maximum ratings t a = 25 c unit: mm electrical characteristics t a = 25 c 3 c internal connection note) the part numbers in the parenthesis show conventional part number. b r 1 r 2 c e parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 50 v collector current i c 500 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1
unr222x series 2 sjh00012ced parameter symbol conditions min typ max unit transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz input resistance unr2221/2224 r 1 ? 30% 2.2 + 30% k ? unr2222 4.7 unr2223 10 resistance ratio r 1 /r 2 0.8 1.0 1.2 ? unr2224 0.17 0.22 0.27 electrical characteristics (continued) t a = 25 c 3 c common characteristics chart p t ? t a characteristics charts of unr2221 i c ? v ce v ce(sat) ? i c h fe ? i c 0 50 100 150 200 250 0 40 80 120 160 ambient temperature t a ( c ) total power dissipation p t ( mw ) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0 012 210 48 6 300 250 200 150 100 50 t a = 25 c collector-emitter voltage v ce (v) collector current i c (ma) 0.01 1 0.1 1 10 100 10 100 1 000 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 100 200 300 400 10 100 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma)
unr222x series 3 sjh00012ced c ob ? v cb i o ? v in v in ? i o characteristics charts of unr2222 i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 0 0.1 24 20 16 15 8 4 1 10 100 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 4 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 0.01 0.1 0.1 1 10 100 1 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) 0 012 210 48 6 300 250 200 150 100 50 t a = 25 c i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 1 0.1 1 10 100 10 100 1 000 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 50 100 150 200 10 100 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 0 0.1 12 10 8 6 4 2 1 10 100 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 4 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 0.01 0.1 0.1 1 10 100 1 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma)
unr222x series 4 sjh00012ced characteristics charts of unr2223 c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr2224 i c ? v ce v ce(sat) ? i c h fe ? i c i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0 012 210 48 6 240 200 160 120 80 40 t a = 25 c collector-emitter voltage v ce (v) collector current i c (ma) 0.01 1 0.1 1 10 100 10 100 1 000 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 50 100 150 200 10 100 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 0 0.1 12 10 8 6 4 2 1 10 100 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 4 output current i o ( a) input voltage v in (v) v o = 5 v t a = 25 c 0.01 0.1 0.1 1 10 100 1 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0 012 210 48 6 300 250 200 150 100 50 t a = 25 c collector-emitter voltage v ce (v) collector current i c (ma) 0.01 1 0.1 1 10 100 10 100 1 000 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 50 100 150 200 10 100 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma)
unr222x series 5 sjh00012ced c ob ? v cb i o ? v in v in ? i o 0 0.1 12 10 8 5 4 2 1 10 100 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 4 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 0.1 0.1 1 10 100 1 000 1 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma)
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep


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